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| IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS(R)-T Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested * ESD Class 1C (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 24.8 25 V m A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-88000 SP0000-87997 SP0000-88001 Marking 3N0625 3N0625 3N0625 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 C T C=25 C I D=12 A Value 25 23 100 60 55 20 48 -55 ... +175 55/175/56 mJ V V W C Unit A Rev. 1.0 page 1 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=15 A V GS=10 V, I D=15 A, SMD version 55 2.1 3.0 4.0 1 A V 3.3 62 62 40 K/W Values typ. max. Unit - 1 1 21.6 21.3 100 100 25.1 24.8 nA m Rev. 1.0 page 2 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=25 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 0.9 25 100 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=25 A, V GS=0 to 10 V 14 6 27 7.0 41 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=25 A, R G=14.8 V GS=0 V, V DS=25 V, f =1 MHz 1862 283 270 15 27 16 27 ns pF Values typ. max. Unit Reverse recovery time t rr - 38 ns Reverse recovery charge 1) Q rr - 30 nC Current is limited by bondwire; with an R thJC = 3.3 K/W the chip is able to carry 30 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 60 30 50 25 40 20 P tot [W] 30 I D [A] 0 50 100 150 200 15 20 10 10 5 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 0.5 100 100 limited by on-state resistance 1 s 10 s 100 s 1 ms 0.1 Z thJC [K/W] 0.05 I D [A] 10 -1 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 100 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 55 5.5 V 6V 80 45 7V R DS(on) [m] 60 I D [A] 35 8V 40 8V 7V 25 10 V 20 6V 5V 0 0 2 4 6 8 15 0 10 20 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 60 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 25 A; V GS = 10 V 45 50 40 40 -55 C 35 R DS(on) [m] 8 I D [A] 25 C 30 30 175 C 25 20 20 10 15 0 0 1 2 3 4 5 6 7 10 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 104 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 3 C [pF] 200A Ciss V GS(th) [V] 20A 2.5 103 Coss 2 Crss 1.5 1 -60 -20 20 60 100 140 180 102 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 102 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 101 I AV [A] I F [A] 10 100C 150C 25C 175 C 25 C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 13 Typical avalanche energy E AS = f(T j) parameter: I D 150 5A 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 66 64 125 62 60 100 V BR(DSS) [V] 8A 58 56 54 52 50 E AS [mJ] 75 12A 50 25 48 0 0 50 100 150 200 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 25 A pulsed parameter: V DD 12 16 Gate charge waveforms 11 V 44 V V GS Qg 10 8 V GS [V] 6 4 2 Q gs Q gd Q gate 0 0 10 20 30 40 50 Q gate [nC] Rev. 1.0 page 7 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-04-03 |
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